CHVPE growth of AlGaN-based UV LEDs

被引：27

作者：

Kurin, Sergey ^{[1
]}

Antipov, Andrey ^{[1
]}

Barash, Iosif ^{[1
]}

Roenkov, Alexander ^{[1
]}

Helava, Heikki ^{[2
]}

Tarasov, Sergey ^{[3
]}

Menkovich, Ekaterina ^{[3
]}

Lamkin, Ivan ^{[3
]}

Makarov, Yuri ^{[1
,2
]}

机构：

[1] Nitride Crystals Ltd, 27 Engels Ave, St Petersburg 194156, Russia

[2] Nitride Crystals Inc, Deer Pk, NY 11729 USA

[3] Saint Petersburg Electrotech Univ LET, St Petersburg 197376, Russia

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期

关键词：

chloride-hydride vapour phase epitaxy; nitrides; light-emitting diodes; packaged dies; p-n junction temperature;

D O I：

10.1002/pssc.201200640

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we present results on development of ultraviolet light-emitting diodes (UV LEDs) based on GaN/AlGaN heterostructures grown on Al2O3 (0001) substrates by chloride-hydride vapour phase epitaxy (CHVPE). Both packaged and unpackaged UV LED dies were fabricated. The peak wavelengths of dies were in the range of 360-365 nm with a typical FWHM of 10-13 nm. UV LEDs proved performance capability at current density up to 125 A/cm(2). (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：289 / 293

页数：5

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