Condenson state and its effects on thermoelectric properties in In4Se3

被引：14

作者：

Lim, Young Soo ^{[1
]}

Jeong, Mahn ^{[1
,2
]}

Seo, Won-Seon ^{[1
]}

Lee, Jong-Heun ^{[2
]}

Park, Cheol-Hee ^{[3
]}

Sznajder, Malgorzata ^{[4
]}

Kharkhalis, Lyubov Yu ^{[5
]}

Bercha, Dariya M. ^{[5
]}

Yang, Jihui ^{[6
]}

机构：

[1] Korea Inst Ceram Engn & Technol, Div Energy & Environm, Seoul 153801, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[3] Corp R&D, Taejon 305380, South Korea

[4] Univ Rzeszow, Inst Phys, PL-35310 Rzeszow, Poland

[5] Uzhgorod Natl Univ, Inst Phys & Chem Solid State, UA-88000 Uzhgorod, Ukraine

[6] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 27期

基金：

新加坡国家研究基金会;

关键词：

PHONON-SPECTRUM; BAND-STRUCTURE; CRYSTALS; PRESSURE; IN4TE3;

D O I：

10.1088/0022-3727/46/27/275304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermoelectric properties of In4Se3 compounds were investigated, and their unique charge and thermal transport behaviours were interpreted in terms of condenson state for the first time. The effects of Sn-doping both on the carrier localization and lattice thermal conductivity were consistent with the proposed condenson model. Some important physical properties, such as the band gap energy of In4Se3 and the binding energy of the condenson state, are also presented.

引用

页数：5

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