Modelling Of Strained Silicon-Germanium Material Parameters For Device Simulation

被引：3
|
作者：
Senapati, B. [1 ]
机构：
[1] Austriamicrosystems AG, Schloss Premstaetten, Unterpremstatten, Austria
来源：
IETE JOURNAL OF RESEARCH | 2007年 / 53卷 / 03期
关键词：
D O I：
10.1080/03772063.2007.10876137
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[ABST].
引用
收藏
页码：215 / 236
页数：22
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