Plasma Immersion Ion Implantation for SOI fabrication

被引：0

作者：

Roth, IS ^{[1
]}

Bryan, MA ^{[1
]}

Liu, W ^{[1
]}

Qin, S ^{[1
]}

Lamm, AJ ^{[1
]}

Chan, C ^{[1
]}

机构：

[1] Silicon Genesis Corp, Campbell, CA 95008 USA

来源：

PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1999年 / 99卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have developed a process to produce high-quality, low-cost SOI wafers by layer transfer of a thin film. One of the steps of this process is hydrogen implantation, which can be cost-effectively performed by Plasma Immersion Ion Implantation (PIII). We have constructed a PIII system, and have used it to produce SOI wafers.

引用

页码：107 / 110

页数：4

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