Quantized conductance in narrow-channel SOI MOSFETS

被引：0

作者：

Ahopelto, J ^{[1
]}

Prunnila, M ^{[1
]}

Eränen, S ^{[1
]}

Kamp, M ^{[1
]}

Emmerling, M ^{[1
]}

Forchel, A ^{[1
]}

Kristensen, A ^{[1
]}

Lindelof, PE ^{[1
]}

Gustafsson, A ^{[1
]}

机构：

[1] VTT Microelect Ctr, FIN-02015 Espoo, Finland

来源：

ADVANCED LUMINESCENT MATERIALS AND QUANTUM CONFINEMENT | 1999年 / 99卷 / 22期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Fabrication and electrical properties of narrow-channel silicon MOSFETs or silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers produced by Smart-Cut process. Mobility of 9000 cm(2)/Vs is measured for a 60 nm-thick SOI film. Quantum point contacts fabricated from the material show quantized conductance at 4.2 K. The effective diameter of the channel constrictions of the devices are estimated to be 30-40 nm. Estimate of the dimensions is based on cross-sectional TEM analysis of oxidized silicon ridges on the same wafer with the devices.

引用

页码：348 / 353

页数：6

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