Theoretical Analysis of Resonant Cavity p-Type Quantum Dot Infrared Photodetector

被引：19
|
作者：
Negi, Chandra Mohan Singh [1 ]
Kumar, Dharmendra [2 ]
Gupta, Saral K. [3 ]
Kumar, Jitendra [2 ]
机构：
[1] Banasthali Vidyapith, Dept Elect, Newai 304022, India
[2] Indian Sch Mines, Dept Elect Engn, Dhanbad 826004, Bihar, India
[3] Banasthali Vidyapith, Dept Phys, Newai 304022, India
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2013年 / 49卷 / 10期
关键词：
Dark current density; intersubband transitions; photocurrent spectra; quantum dot infrared photodetector; response wavelength; valance subband structure; DARK CURRENT; EMISSION; HOLES;
D O I：
10.1109/JQE.2013.2279566
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theoretical analysis for resonant cavity enhanced p-type quantum dot (QD) infrared photo-detector that uses intervalence subband transitions in InxGa1-xAs/GaAs QDs is presented. Multiband effective mass k.p model with the strain effect is used to calculate valance subband energy levels. Photocurrent spectra, response wavelength, and dark current density of QD infrared detector have been calculated. The calculations have been performed for a wide range of dot sizes, compositions, dot height, bias voltages, and temperatures. The effect of QD height, radius, and composition on the response of the photodetectors has been analyzed and some criteria for performance improvement have been suggested.
引用
收藏
页码：839 / 845
页数：7
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