Small-divergence semiconductor lasers by plasmonic collimation

被引:204
|
作者
Yu, Nanfang [1 ]
Fan, Jonathan [1 ]
Wang, Qi Jie [1 ]
Pfluegl, Christian [1 ]
Diehl, Laurent [1 ]
Edamura, Tadataka [2 ]
Yamanishi, Masamichi [2 ]
Kan, Hirofumi [2 ]
Capasso, Federico [1 ]
机构
[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Hamamatsu Photon KK, Cent Res Lab, Hamamatsu, Shizuoka 4348601, Japan
基金
美国国家科学基金会;
关键词
D O I
10.1038/nphoton.2008.152
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Surface plasmons offer the exciting possibility of improving the functionality of optical devices through the subwavelength manipulation of light. We show that surface plasmons can be used to shape the beams of edge- emitting semiconductor lasers and greatly reduce their large intrinsic beam divergence. Using quantum cascade lasers as a model system, we show that by defining a metallic subwavelength slit and a grating on their facet, a small beam divergence in the laser polarization direction can be achieved. Divergence angles as small as 2.4 degrees are obtained, representing a reduction in beam spread by a factor of 25 compared with the original 9.9-mu m-wavelength laser used. Despite having a patterned facet, our collimated lasers do not suffer significant reductions in output power (similar to 100 mW at room temperature). Plasmonic collimation provides a means of efficiently coupling the output of a variety of lasers into optical fibres and waveguides, or to collimate them for applications such as free-space communications, ranging and metrology.
引用
下载
收藏
页码:564 / 570
页数:7
相关论文
共 50 条
  • [41] Subwavelength Plasmonic Lasers
    Park, Hong-Gyu
    Kwon, Soon-Hong
    Kang, Ju-Hyung
    2012 14TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2012), 2012,
  • [42] Plasmonic Collimation and Beaming from LED Active Materials
    DiMaria, Jeff
    Dimakis, Emmanouil
    Moustakas, Theodore D.
    Paiella, Roberto
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2013,
  • [43] LASING THRESHOLD AND BEAM DIVERGENCE IN LONGITUDINALLY ELECTRON-BEAM-PUMPED SEMICONDUCTOR-LASERS
    BOGDANKEVICH, IL
    BOGDANKEVICH, OV
    DARZNEK, SA
    ZVEREV, MM
    TUMANOVA, LA
    USHAKHIN, VA
    KVANTOVAYA ELEKTRONIKA, 1985, 12 (04): : 848 - 851
  • [44] Semiconductor lasers
    Dick, S
    1996 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING - CONFERENCE PROCEEDINGS, VOLS I AND II: THEME - GLIMPSE INTO THE 21ST CENTURY, 1996, : 249 - 252
  • [45] SEMICONDUCTOR LASERS
    BASOV, NG
    SCIENCE, 1965, 149 (3686) : 821 - +
  • [46] SEMICONDUCTOR LASERS
    NATHAN, MI
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1276 - +
  • [47] SEMICONDUCTOR LASERS
    REDIKER, RH
    PHYSICS TODAY, 1965, 18 (02) : 42 - &
  • [48] SEMICONDUCTOR LASERS
    BASOV, NG
    POPOV, YM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (11): : 1325 - &
  • [49] SEMICONDUCTOR LASERS
    NAKAMURA, S
    NAGANO, M
    OKU, T
    SUSAKI, W
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1968, 51 (04): : 197 - +
  • [50] SEMICONDUCTOR LASERS
    PANKOVE, JI
    KRESSEL, H
    ISRAEL JOURNAL OF TECHNOLOGY, 1971, 9 (03): : 221 - +