AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3 mΩ.cm2 Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

被引：15

作者：

Liu, Xinke ^{[1
]}

Zhan, Chunlei ^{[1
]}

Chan, Kwok Wai ^{[2
]}

Liu, Wei ^{[3
]}

Tan, Leng Seow ^{[1
]}

Chen, Kevin Jing ^{[2
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

[3] Nanyang Technol Univ, Luminous Ctr Excellence Semicond Lighting & Displ, Singapore 639785, Singapore

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 06期

关键词：

BOOST CONVERTER; HEMTS; POWER;

D O I：

10.1143/APEX.5.066501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain L-GD spacing of 5 mu m achieved an off-state breakdown voltage V-BR of 800 V and an on-state resistance R-on of 3 m Omega.cm(2). In addition, subthreshold swing S of similar to 97 mV/decade and I-on/I-off ratio of similar to 10(6) were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 mu m, the VBR achieved in this work is the highest. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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