Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N+ implanted silicon

被引：5

作者：

Gartner, M. ^{[2
]}

Szekeres, A. ^{[1
]}

Alexandrova, S. ^{[3
]}

Osiceanu, P. ^{[2
]}

Anastasescu, M. ^{[2
]}

Stoica, M. ^{[2
]}

Marin, A. ^{[2
]}

Vlaikova, E. ^{[1
]}

Halova, E. ^{[3
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria

[2] Romanian Acad 202 Splaiul Independentei, Inst Phys Chem Ilie Murgulescu, Bucharest 060021, Romania

[3] Tech Univ Sofia, Sofia 1797, Bulgaria

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 18期

关键词：

Annealing of N+ ion implanted Si; Silicon oxynitride; VIS and IR ellipsometry; XPS measurements; DAMAGE DEPTH PROFILES; SPECTROSCOPIC ELLIPSOMETRY; NITROGEN; OXYNITRIDE; IR; ABSORPTION; OXIDES;

D O I：

10.1016/j.apsusc.2012.04.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By applying ellipsometry and extending the measurements from visible to mid infrared spectral range we examined the complex dielectric function of thin layers grown into silicon. The layers were synthesized by high-temperature (1050 degrees C) annealing in oxidizing ambient of plasma immersion N+ ion implanted Si substrates. Si-N, Si-NO and Si-Si chemical bonds in the silicon oxide network were identified and confirmed by X-ray photoelectron spectroscopy (XPS). Depending on N+ fluence (10(16)-10(18) N+/cm(2)) and annealing duration (10 and 20 min) the grown layers were identified either as silicon oxynitride with considerably low N content or silicon dioxide enriched with nitrogen. (C)012 Elsevier B.V. All rights reserved.

引用

页码：7195 / 7201

页数：7

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