A Compact V-Band Active SiGe Power Detector

被引：0

作者：

Zhang, Jian ^{[1
]}

Fusco, Vincent ^{[1
]}

Zhang, Yunhua ^{[1
]}

机构：

[1] Queens Univ Belfast, Inst Elect Commun & Informat Technol ECIT, Belfast, Antrim, North Ireland

来源：

2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年

关键词：

MMIC microwave millimeterwave power detector; OOK/ASK; SiGe HBT; AMPLIFIER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact V-band active power detector using Infineon 0.35 mu m SiGe HBT process (f(T) / f(max) = 170/250 GHz) is described. The total chip area is only 0.35x0.8 mm2 including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.

引用

页码：528 / 531

页数：4

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