Electrically Pumped GaSb-based VCSEL with Buried Tunnel Junction

被引：0
|
作者：
Bachmann, A. [1 ]
Lim, T. [1 ]
Kashani-Shirazi, K. [1 ]
Dier, O. [1 ]
Lauer, C. [1 ]
Amann, M. -C. [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the concept and first results of a continuous wave room temperature operating electrically pumped GaSb-based VCSEL with buried tunnel junction as current aperture. Laser emission has been achieved at 2.3 mu m. (C) 2008 Optical Society of America
引用
收藏
页码：1752 / 1753
页数：2
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