Structural disorder in CdSxSe1-x films probed by microdiffraction experiments

被引:20
|
作者
Pagliara, S
Sangaletti, L
Depero, LE
Capozzi, V
Perna, G
机构
[1] Ist Nazl Fis Mat, Unita Bari, I-70126 Bari, Italy
[2] Univ Bari, Dipartimento Interateneo Fis, I-70126 Bari, Italy
[3] Univ Cattolica, Dipartimento Matemat & Fis, I-25121 Brescia, Italy
[4] Univ Brescia, Lab Strutturist Chim, I-25123 Brescia, Italy
[5] Univ Foggia, Fac Med & Chirurg, I-71100 Foggia, Italy
关键词
microdiffraction; CdSSe; alloy; disorder; photoluminescence; exciton;
D O I
10.1016/S0169-4332(01)00762-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Disorder effects in CdSxSe1-x alloy thin films grown on Si(I 1 1) substrates are identified by X-ray diffraction. These effects are correlated with the localization of excitons observed in photoluminescence. Furthermore, X-ray diffraction patterns collected with a large area detector allowed us to point out structural disorder effects which cannot be observed by conventional 0-20 diffractometers. In the microdiffraction patterns, the broadening along the Debye rings reveals that the films are not perfectly epitaxially grown. Moreover, the lack of some reflections expected in the microdiffraction spectra indicates that further disorder effects are present. It is shown that these effects are not related to alloying, (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:527 / 532
页数:6
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