STUDY OF INTERFACIAL REACTION AND ELECTROMIGRATION RELIABILITY OF PB-FREE SOLDERS WITH NICKEL IRON BARRIER LAYER

被引：0

作者：

Lu, Minhua ^{[1
,2
]}

Lauro, Paul ^{[2
]}

Goldsmith, Charles ^{[2
]}

机构：

[1] IBM TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA

[2] IBM Microelect Div, Hopewell Jct, NY USA

来源：

PROCEEDINGS OF THE ASME PACIFIC RIM TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC SYSTEMS, MEMS AND NEMS 2011, VOL 1 | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study of NiFe alloy as under bump metallurgy (UBM) for Pb-free interconnect has been performed. Intermetallic growth rate of NiFe and SnAg solder is about 10x slower than that of Ni and SnAg solder. The thin and uniform intermetallic compound FeSn2 showed excellent thermal and electromigration stability. By slowing down or stopping the UBM dissolution, NiFe effectively eliminated the early EM fails that are common with Ni UBM. NiFe is an interesting candidate for the chip and substrate surface metallurgy of Pb-free interconnects for high power applications.

引用

页码：453 / +

页数：2

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