Preparation and Characterization of Ba(ZrxTi1-x)O3 Thin Films Using Reactive Sputtering Method

被引：0

作者：

Kim, Jin Woong ^{[1
]}

Osumi, Tsuyoshi ^{[1
]}

Mastuoka, Masashi ^{[1
]}

Tai, Takeshi ^{[1
]}

Nishide, Masamichi ^{[1
]}

Funakubo, Hiroshi ^{[2
]}

Shima, Hiromi ^{[1
]}

Nishida, Ken ^{[1
]}

Yamamoto, Takashi ^{[1
]}

机构：

[1] Natl Def Acad, Dept Commun Engn, Yokosuka, Kanagawa 2398686, Japan

[2] Tokyo Inst Technol, Dept Mat Sci & Engn, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 09期

关键词：

ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; CRYSTAL-STRUCTURE; TEMPERATURE; CAPACITORS; DEPOSITION; CERAMICS;

D O I：

10.1143/JJAP.51.09LA01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ba(ZrxTi1-x)O-3 (BZT) thin films with different Zr contents were deposited on (100) MgO and (100) Pt/(100) MgO substrates by RF-magnetron reactive sputtering using metal targets. The BZT (0 < x < 0.89) thin films had a single perovskite phase with only (001)/(100) orientation. In all cases, the ratio of Ba/Ti was stoichiometric according to X-ray fluorescence spectrometry (WDX) measurement. Atomic force microscopy (AFM) study proved that BZT films possess a dense microstructure without cracks or voids. The grain size was found to decrease with increasing of Zr content. The effect of Zr content on the dielectric constant and leakage current was studied. BZT thin films showed ferroelectric-to-paraelectric properties with increasing Zr content and excellent leakage properties according to measurements of electrical properties. These results indicated that we succeeded in depositing high-quality and low-sputter-damage BZT thin films by reactive sputtering using metal targets. (c) 2012 The Japan Society of Applied Physics

引用

页数：5

共 50 条

[11] Preparation and tunability properties of Ba(ZrxTi1-x)O3 thin films grown by a sol-gel process
Zhai, Jiwei
Hu, Dan
Yao, Xi
Xu, Zhengkui
Chen, Haydn
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (10-11) : 1917 - 1920
[12] Preparation and dielectric properties of Ba(ZrxTi1-x)O3 thin films grown by a sol-gel process
Gao, C
Zhai, JW
Yao, X
INTEGRATED FERROELECTRICS, 2005, 74 : 147 - 153
[13] Preparation of Zr-rich Pb(ZrxTi1-x)O3 thin films and their properties
Wang, WS
Chen, ZM
Adachi, M
Kawabata, A
INTEGRATED FERROELECTRICS, 1998, 20 (1-4) : 191 - 203
[14] Characterization of Pb(ZrxTi1-x)O3 films prepared by vacuum evaporation method
Integr Ferroelectr, 1-4 pt 2 (215):
[15] Growth and structure of epitaxial Pb(ZrxTi1-x)O3 films and Pb(ZrxTi1-x)O3 oxide heterostructures
Tybell, T.
Antognazza, L.
Ahn, C.H.
Frauchiger, L.
Pranyies, P.
Decroux, M.
Karkut, M.G.
Passerini, R.
Stadelmann, P.
Ramm, J.
Beck, E.
Fischer, O.
Triscone, J.M.
Vide: Science, Technique et Applications, 1997, 53 (283): : 48 - 60
[16] Reactive ion etching of Pb(ZrxTi1-x)O3 thin films in an inductively coupled plasma
Chung, CW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04): : 1894 - 1900
[17] Preparation and characterization of Pb(ZrxTi1-x)O3 thin film on indium tin oxide
Liu, Shuang
Wu, Ya-Lei
Xu, Xiao-Hui
Wen, Li
Huang, Wen-Hao
Chu, Jia-Ru
Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering, 2007, 5 (04): : 327 - 330
[18] Synthesis of BaTiO3 and Ba( ZrxTi1-X)O3 by using the Soft Combustion Method
Ahmad, Atiqah
Razak, Khairunisak Abdul
PROCEEDING OF THE 3RD INTERNATIONAL CONFERENCE OF GLOBAL NETWORK FOR INNOVATIVE TECHNOLOGY 2016 (3RD IGNITE-2016): ADVANCED MATERIALS FOR INNOVATIVE TECHNOLOGIES, 2017, 1865
[19] Study of RF-sputtered Ba(ZrxTi1-x)O3 thin films for ULSI DRAM application
Lee, JH
Chen, TS
Balu, V
Han, J
Mohammedali, R
Gopalan, S
Wong, CH
Lee, JC
FERROELECTRIC THIN FILMS VII, 1999, 541 : 47 - 52
[20] Structural and tunable characteristics of Ba(ZrxTi1-x)O3 films prepared by RF-magnetron sputtering using a metal target
Kim, Jin-Woong
Shima, Hiromi
Nishida, Ken
Yamamoto, Takashi
Funakubo, Hiroshi
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 65 (03) : 275 - 280

← 1 2 3 4 5 →