A study of the diffusion and pn-junction formation in CIGS solar cells using EBIC and EDX measurements

被引：0

作者：

Ishizuka, S ^{[1
]}

Sakurai, K ^{[1
]}

Matsubara, K ^{[1
]}

Yamada, A ^{[1
]}

Yonemura, M ^{[1
]}

Kuwamori, S ^{[1
]}

Nakamura, S ^{[1
]}

Kimura, Y ^{[1
]}

Nakanishi, H ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058568, Japan

来源：

Thin-Film Compound Semiconductor Photovoltaics | 2005年 / 865卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using EBIC and EDX measurements, CIGS solar cells prepared under several different conditions were observed and characterized. The results of EBIC and EDX measurements suggest that Cd plays an important role in the forming of a buried pn-junction in the CIGS layer via diffusion, and de-emphasize the possibility of the formation of the hetero pn-junction at the CdS/CIGS heterointerface. The correlation of the extent of the space charge region and the observed shift in the pn-junction location with the diffusion of the constituent elements in CIGS was investigated.

引用

页码：265 / 270

页数：6

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