A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation

被引：7
|
作者：
Lee, Kiwon [1 ]
Lee, Byoungwook [2 ]
Yoon, Sunwoong [2 ]
Hong, Jung-ho [2 ]
Yang, Kyounghoon [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
[2] I3system Inc, Taejon 305701, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 07期
关键词：
PHOTON DETECTOR; DIODE DETECTORS; MULTIPLICATION; SUPPRESSION; PERFORMANCE; DESIGN;
D O I：
10.7567/JJAP.52.072201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the performances of a planar-type Geiger-mode InGaAs/InP avalanche photodiode (APD) using a single-diffusion process based on a single wet recess-etching technique at a wavelength of 1.55 mu m. The recess-etched window region is found to have a smoothly etched sidewall with a large slope width of 0.9 mu m. The Geiger-mode characteristics have been measured at 240-280 K for a 20 mu m diameter device. The fabricated Geiger-mode APD shows a low dark count probability (DCP) per gate pulse of 2.8 x 10(-3), a high photon detection efficiency (PDE) of 17.4%, and a low noise equivalent power (NEP) of 1.74 x 10(-16) W/Hz(1/2) at 240 K. The results are the first demonstration of a planar-type single-diffused Geiger-mode APD using a single wet recess-etching. (C) 2013 The Japan Society of Applied Physics
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页数：4
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