ZnO-based low-voltage inverter with quantum-well-structured nanohybrid dielectric

被引：15

作者：

Cha, Sung Hoon ^{[1
]}

Oh, Min Suk ^{[1
]}

Lee, Kwang H. ^{[1
]}

Choi, Jeong-M. ^{[1
]}

Lee, Byoung H. ^{[2
]}

Sung, Myung A. ^{[2
]}

Im, Seongil ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Hanyang Univ, Dept Chem, Seoul 133791, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 10期

关键词：

charge injection devices; organic-inorganic nanohybrid; thin-film transistors (TFTs); ZnO;

D O I：

10.1109/LED.2008.2002908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/inorganic nanohybrid dielectric, which contains AlOx/TiOx/AlOx in triple-layer structure. The inverter shows a high voltage gain of similar to 20 under the supply voltage (V-DD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlOx-based barrier and trapped in the TiOx-based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.

引用

页码：1145 / 1147

页数：3

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