Influence of growth temperature on the morphology and luminescence of Ga2O3:Mn nanowires

被引：10
|
作者：
Gonzalo, Alicia [1 ]
Nogales, Emilio [1 ]
Mendez, Bianchi [1 ]
Piqueras, Javier [1 ]
机构：
[1] Univ Complutense Madrid, Dept Fis Mat, Avda Complutense S-N, Madrid 28040, Spain
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 02期
关键词：
Ga2O3:Mn nanowires; morphology; luminescence; GALLIUM OXIDE; PHOTOLUMINESCENCE; BETA-GA2O3;
D O I：
10.1002/pssa.201300310
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Mn doped -Ga2O3 nanowires have been obtained by a thermal evaporation method on a gallium oxide substrate. The growth temperature has been varied in the range 1300-1500 degrees C. The morphology of the resulting structures has been found to depend on this temperature, as observed in the images obtained with scanning electron microscopy. The structures grown on the sample at 1500 degrees C are both isolated microrods and interconnected rods. At lower temperatures, 1300 and 1400 degrees C, nanowires with widths of about 100nm and stair-shaped microcrystals were found. Raman analysis demonstrates that both nanowires and microrods present the -Ga2O3 crystal structure. In addition, Mn related light emission has been found to depend on the growth temperature. The assessment of luminescence properties have been carried out by cathodoluminescence analysis. The results show an intense orange emission in the nanowires and green emission in the microrods. These bands are associated to the manganese ions incorporated into the gallium oxide crystal lattice.
引用
收藏
页码：494 / 497
页数：4
相关论文
共 50 条
  • [41] Synthesis of β-Ga2O3 nanowires by laser ablation
    Hu, JQ
    Li, Q
    Meng, XM
    Lee, CS
    Lee, ST
    JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (37): : 9536 - 9539
  • [42] Synthesis of β-Ga2O3 nanowires as a broadband emitter
    Tien, L. C.
    Ho, C. H.
    Yao, X. T.
    Cai, J. R.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 102 (01): : 105 - 108
  • [43] Nanowires, nanobelts and related nanostructures of Ga2O3
    Gundiah, G
    Govindaraj, A
    Rao, CNR
    CHEMICAL PHYSICS LETTERS, 2002, 351 (3-4) : 189 - 194
  • [44] Ga2O3 nanowires preparation at atmospheric pressure
    Korbutowicz, R.
    Stafiniak, A.
    Serafinczuk, J.
    MATERIALS SCIENCE-POLAND, 2017, 35 (02): : 412 - 420
  • [45] Synthesis of β-Ga2O3 nanowires by an MOCVD approach
    Kim, HW
    Kim, NH
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (04): : 763 - 765
  • [46] GaOOH, and β- and γ-Ga2O3 nanowires: preparation and photoluminescence
    Huang, Chih-Chia
    Yeh, Chen-Sheng
    NEW JOURNAL OF CHEMISTRY, 2010, 34 (01) : 103 - 107
  • [47] Ga2O3 nanowires prepared by physical evaporation
    Zhang, HZ
    Kong, YC
    Wang, YZ
    Du, X
    Bai, ZG
    Wang, JJ
    Yu, DP
    Ding, Y
    Hang, QL
    Feng, SQ
    SOLID STATE COMMUNICATIONS, 1999, 109 (11) : 677 - 682
  • [48] Synthesis of βGa2O3 nanowires by an MOCVD approach
    H.W. Kim
    N.H. Kim
    Applied Physics A, 2005, 81 : 763 - 765
  • [49] Synthesis of GaP nanowires with Ga2O3 coating
    Liu, BD
    Bando, Y
    Tang, CC
    Xu, FF
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (07): : 1585 - 1588
  • [50] Synthesis of GaP nanowires with Ga2O3 coating
    B.D. Liu
    Y. Bando
    C.C. Tang
    F.F. Xu
    Applied Physics A, 2005, 80 : 1585 - 1588
12345