Integrated MEMS RF Probe for SEM Station-Pad Size and Parasitic Capacitance Reduction

被引:4
|
作者
El Fellahi, A. [1 ]
Haddadi, K. [1 ]
Marzouk, J. [1 ]
Arscott, S. [1 ]
Boyaval, C. [1 ]
Lasri, T. [1 ]
Dambrine, G. [1 ]
机构
[1] Univ Lille 1, Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, F-59655 Villeneuve Dascq, France
关键词
Microelectromechanical systems (MEMS) ground-signal-ground (GSG) probe; microwaves; nano-devices; on-wafer measurements; radio frequency (RF) probe; scanning electron microscope;
D O I
10.1109/LMWC.2015.2463213
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter describes a new generation of instrumentation that aims to address both on-wafer measurement of nano-devices in the microwave regime and reduction of probing pads parasitic effects. The system consists of a scanning electron microscope equipped with XYZ nano-positioners and in-house MEMS-based miniaturized ground-signal-ground probes able to probe drastically reduced access pad (2 x 2 mu m(2)). The proof-of-concept of this system is demonstrated through one-port calibrated S-parameter measurements up to 4 GHz. Comparison with a conventional on-wafer set-up shows a reduction of parasitic capacitance of the probing pad by one order of magnitude. Pad capacitances as low as 200 aF are measured.
引用
收藏
页码:693 / 695
页数:3
相关论文
共 9 条
  • [1] Effect of Parasitic Capacitance on RF MEMS Switch OFF/ON Ratio
    Bansal, Deepak
    Mehta, Khushbu
    Bajpai, Anuroop
    Kumar, Amit
    Kumar, Prem
    Rangra, Kamaljit
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2019, 20 (02) : 113 - 117
  • [2] Effect of Parasitic Capacitance on RF MEMS Switch OFF/ON Ratio
    Deepak Bansal
    Khushbu Mehta
    Anuroop Bajpai
    Amit Kumar
    Prem Kumar
    Kamaljit Rangra
    Transactions on Electrical and Electronic Materials, 2019, 20 : 113 - 117
  • [3] Parasitic effects reduction for wafer-level packaging of RF-MEMS
    Iannacci, J.
    Tian, J.
    Sinaga, S. M.
    Gaddi, R.
    Gnudi, A.
    Bartek, M.
    DTIP 2006: SYMPOSIUM ON DESIGN,TEST, INTEGRATION AND PACKAGING OF MEMS/MOEMS 2006, 2006, : 25 - +
  • [4] CMOS-MEMS Variable Capacitors with Low Parasitic Capacitance for Frequency-Reconfigurable RF Circuits
    Reinke, John
    Jajoo, Abhishek
    Wang, Leon
    Fedder, Gary
    Mukherjee, Tamal
    RFIC: 2009 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2009, : 455 - 458
  • [5] AMC-integrated reconfigurable beamforming folded dipole antenna with parasitic and RF MEMS
    Lago H.
    Jamlos M.F.
    Soh P.J.
    Vandenbosch G.A.E.
    Jamlos, Mohd F. (mohdfaizaljamlos@gmail.com), 1600, Electromagnetics Academy (69): : 159 - 167
  • [6] A modelling and simulation approach for radio frequency (RF) parasitic effects reduction in wafer-level packaging (WLP) of RF-MEMS passive components
    Iannacci, J.
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2020, 26 (12): : 3839 - 3845
  • [7] A modelling and simulation approach for radio frequency (RF) parasitic effects reduction in wafer-level packaging (WLP) of RF-MEMS passive components
    J. Iannacci
    Microsystem Technologies, 2020, 26 : 3839 - 3845
  • [8] Stable Multi-Step Capacitance Control with Binary Voltage Operation at +/-3V in Integrated Piezoelectric RF MEMS Tunable Capacitors
    Nagano, T.
    Nishigaki, M.
    Kawakubo, T.
    Itaya, K.
    2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 25 - +
  • [9] Reduced-Size Low-Voltage RF MEMS X-Band Phase Shifter Integrated on Multilayer Organic Package
    Chung, David J.
    Polcawich, Ronald G.
    Pulskamp, Jeffrey S.
    Papapolymerou, John
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2012, 2 (10): : 1617 - 1622