In the recent past, current-induced magnetization reversal (CIMR) has been extensively studied on the heterostructures prepared with heavy metal (HM) and ferromagnet (FM) having spin-orbit torque (SOT). The critical current density (J(c)) for magnetization switching depends on the SOT efficiency. In this study, we have chosen Ta/Pt/CoFeB/Pt/Ta/CoFeB/Pt heterostructure having perpendicular magnetic anisotropy (PMA) with broken lateral symmetry and an in-plane magnetized (IMA) ferromagnetic layer on top of the Ta layer. In this heterostructure, we have utilized the SOT originated by the spin-Hall effect that arises from two materials having opposite spin Hall angles i.e. the bottom Pt and the top Ta layer. We have also introduced lateral space inversion asymmetry (SIA) that combines both damping-like and field-like field. The enhanced spin Hall angle, the stray field by IMA ferromagnetic layer, and the lateral SIA effect jointly enhances the SOT efficiency of the system to reduce the J(c) for CIMR. We have found that the SOT efficiency and the effective spin Hall angle of our newly designed heterostructure to be 106 Oe/10(11)A/m(2) and 0.23, respectively. Thus we have achieved CIMR with a lower critical current density of 8.65 x 10(10)A/m(2) and 3.35 x 10(10)A/m(2) at 0 Oe and 600 Oe field applied in-plane (IP), respectively. Due to the lower J(c) for CIMR our newly designed heterostructure has potential in low-power magnetic data storage applications.
机构:
Huaiyin Normal Univ, Dept Phys, Huaian 223300, Peoples R China
Huaiyin Normal Univ, Jiangsu Key Lab Modern Measurement Technol & Inte, Huaian 223300, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaHuaiyin Normal Univ, Dept Phys, Huaian 223300, Peoples R China
Dai, Zhiming
Liu, Wei
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaHuaiyin Normal Univ, Dept Phys, Huaian 223300, Peoples R China
Liu, Wei
Zhao, Xiaotian
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaHuaiyin Normal Univ, Dept Phys, Huaian 223300, Peoples R China
Zhao, Xiaotian
Liu, Long
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaHuaiyin Normal Univ, Dept Phys, Huaian 223300, Peoples R China
Liu, Long
Zhang, Zhidong
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R ChinaHuaiyin Normal Univ, Dept Phys, Huaian 223300, Peoples R China
机构:
Cornell Univ, Ithaca, NY 14850 USA
Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R ChinaCornell Univ, Ithaca, NY 14850 USA
Zhu, Lijun
Ralph, Daniel C.
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Cornell Univ, Ithaca, NY 14850 USA
Kavli Inst Cornell, Ithaca, NY 14850 USACornell Univ, Ithaca, NY 14850 USA
Ralph, Daniel C.
Buhrman, Robert A.
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Cornell Univ, Ithaca, NY 14850 USACornell Univ, Ithaca, NY 14850 USA
机构:
Hubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R ChinaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
Song, Min
Luo, Shijiang
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机构:
Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R ChinaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
Luo, Shijiang
Li, Xin
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机构:
Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R ChinaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
Li, Xin
Zhang, Shuai
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Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R ChinaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
Zhang, Shuai
Luo, Qiang
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Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R ChinaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
Luo, Qiang
Guo, Zhe
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Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R ChinaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
Guo, Zhe
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机构:
Hong, Jeongmin
Zhou, Bin
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Hubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R ChinaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
Zhou, Bin
Gu, Haoshuang
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Hubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R ChinaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
Gu, Haoshuang
Lee, OukJae
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机构:
Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South KoreaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
Lee, OukJae
You, Long
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机构:
Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R ChinaHubei Univ, Hubei Key Lab Ferro Piezoelectr Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
机构:
College of Electronics and Information Engineering ,Guangdong Ocean UniversityCollege of Electronics and Information Engineering ,Guangdong Ocean University