An FPGA-based Manipulation System for ReRAM Characterization

被引:0
|
作者
Xing, Jinling [1 ]
Li, Qingjiang [1 ]
Li, Jiwei [1 ]
Wang, Wei [1 ]
Liu, Haijun [1 ]
Xu, Hui [1 ]
机构
[1] Natl Univ Def Technol, Coll Elect Sci & Engn, Changsha 410073, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
ReRAM Characterization; FPGA; transient response; multi-level; resistance tuning;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ReRAM is a promising candidate for future nonvolatile high-density memory, while the electrical characterization progress may be hindered by the shortages of general semiconductor characterization instruments. This paper introduces a user-friendly FPGA-based characterization system, aiming to provide a power tool to facilitate electrical property assessments of multi-level ReRAM devices in either standalone or crossbar array. The detail design of the hardware and software is presented for the purpose of providing design references for the developments of similar systems. Experimental results show that the system can achieve maximum 1.5% read-out error for resistance range of 100 Omega similar to 1M Omega. Besides, the system also shows its capabilities in capturing the transient change of ReRAM devices and manipulating device resistance in crossbar array by adopting complex resistance tuning algorithm.
引用
收藏
页码:31 / 34
页数:4
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