InGaN/GaN heterostructures grown by submonolayer deposition

被引：1
|
作者：
Tsatsulnikov, A. F. [1 ,2 ]
Lundin, W. V. [1 ,2 ]
Zavarin, E. E. [1 ,2 ]
Sakharov, A. V. [1 ,2 ]
Musikhin, Yu. G.
Usov, S. O. [1 ,2 ]
Mizerov, M. N. [2 ]
Cherkashin, N. A. [3 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Submicron Heterostruct Microelect Res & Engn Ctr, St Petersburg 194021, Russia
[3] Natl Ctr Sci Res CNRS, Ctr Mat Elaborat & Struct Studies CEMES, F-31055 Toulouse, France
来源：
SEMICONDUCTORS | 2012年 / 46卷 / 10期
基金：
俄罗斯基础研究基金会;
关键词：
QUANTUM DOTS; EPITAXY;
D O I：
10.1134/S106378261210017X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
InGaN/(Al,Ga)N heterostructures containing ultrathin InGaN layers, grown by submonolayer deposition are studied. It is shown that significant phase separation with the formation of local In-enriched regions similar to 3-4 nm in height and similar to 5-8 nm in lateral size is observed in InGaN layers in the case of InGaN and GaN growth by cyclic deposition to effective thicknesses of less than one monolayer. The effect of growth interruption in a hydrogen-containing atmosphere during submonolayer growth on the structural and optical properties of InGaN/(Al,Ga)N heterostructures is studied. It is shown that these interruptions stimulate phase separation. It is also shown that the formation of In-enriched regions can be controlled by varying the effective InGaN and GaN thicknesses in the submonolayer deposition cycles.
引用
收藏
页码：1335 / 1340
页数：6
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