Investigate on Structure and Optical Properties of ZnO Nanostructures Grown on a-GaN/r-Sapphire

被引：2

作者：

Yu, Naisen ^{[1
,2
]}

Dong, Dapeng ^{[1
]}

Qi, Yan ^{[1
]}

Yang, Rui ^{[1
]}

Gui, Jing ^{[1
]}

机构：

[1] Dalian Nationalities Univ, Sch Phys & Mat Engn, Liaoning Key Lab Optoelect Films & Mat, Dalian 116600, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2018年 / 18卷 / 03期

基金：

中国国家自然科学基金;

关键词：

a-Plane ZnO; Aqueous Solutions; Different Growth Time; FILMS; FABRICATION; ZNO(0001);

D O I：

10.1166/jnn.2018.13869

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

ZnO nanostructures were directly grown on a-GaN/r-sapphire with different growth time via aqueous method. Structural and optical properties of the nanostructures were investigated by using a variety of techniques including X-ray diffraction (XRD), scan electron microscope (SEM), room-temperature photoluminescence (PL), and Raman scattering. The results showed the growth mechanism of ZnO nanostructures grown on a-GaN is Volmer-Weber (VW) mode, which is due to the high interfacial free-energy between a-plane ZnO and GaN. Meanwhile, compressive strains were revealed to exist by the optical characterizations. And the strengths were found to reduce with increasing growth time.

引用

页码：2072 / 2074

页数：3

共 50 条

[31] Interfacial structure of a-plane GaN grown on r-plane sapphire
Kroeger, R.
Paskova, T.
Figge, S.
Hommel, D.
Rosenauer, A.
Monemar, B.
APPLIED PHYSICS LETTERS, 2007, 90 (08)
[32] Structure, Optical and Photocatalytic Properties of ZnO Nanostructures Grown on Ag-Coated Si Substrates
Karpyna, V
Myroniuk, L.
Bykov, O.
Myroniuk, D.
Kolomys, O.
Strelchuk, V
Petrosian, L.
Ievtushenk, A.
ACTA PHYSICA POLONICA A, 2022, 142 (05) : 644 - 650
[33] Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates
蒋仁渊
许晟瑞
张进成
姜腾
江海清
王之哲
樊永祥
郝跃
Chinese Physics Letters, 2015, 32 (09) : 158 - 161
[34] Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0001)
Pan, C. J.
Tu, C. W.
Tun, C. J.
Lee, C. C.
Chi, G. C.
JOURNAL OF CRYSTAL GROWTH, 2007, 305 (01) : 133 - 136
[35] Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
Xu ShengRui
Zhou XiaoWei
Hao Yue
Yang LiNan
Zhang JinCheng
Mao Wei
Yang Cui
Cai MaoShi
Ou XinXiu
Shi LinYu
Cao YanRong
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 53 (09) : 2363 - 2366
[36] Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
XU ShengRuiZHOU XiaoWeiHAO YueYANG LiNanZHANG JinChengMAO WeiYANG CuiCAI MaoShiOU XinXiuSHI LinYu CAO YanRong Key Lab of Wide Band Gap Semiconductor Materials and DevicesInstitute of MicroelectronicsXidian UniversityXian China School of Electronical Machanical EngineeringXidian UniversityXian China
Science China(Technological Sciences), 2010, 53 (09) : 2363 - 2366
[37] p-Type Nonpolar a-ZnO:N Thin Films on r-Sapphire Substrates Grown by Molecular Beam Epitaxy
Naoki Maekawa
Hirotake Nakayama
Nobuaki Yamane
Koji Irie
Tomoki Abe
Hirofumi Kasada
Kunio Ichino
Kazuaki Akaiwa
Journal of Electronic Materials, 2020, 49 : 4474 - 4478
[38] Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
ShengRui Xu
XiaoWei Zhou
Yue Hao
LiNan Yang
JinCheng Zhang
Wei Mao
Cui Yang
MaoShi Cai
XinXiu Ou
LinYu Shi
YanRong Cao
Science China Technological Sciences, 2010, 53 : 2363 - 2366
[39] Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
XU ShengRui1
2 School of Electronical & Machanical Engineering
Science China(Technological Sciences), 2010, (09) : 2363 - 2366
[40] Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown on GaN and Sapphire Substrates
Jary, Vitezslav
Hospodkova, Alice
Hubacek, Tomas
Hajek, Frantisek
Blazek, Karel
Nikl, Martin
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (06) : 974 - 977

← 1 2 3 4 5 →