Atomic Layer Deposition of BiFeO3 Thin Films Using β-Diketonates and H2O

被引：32

作者：

Zhang, Feng ^{[1
]}

Sun, Guosheng ^{[1
]}

Zhao, Wanshun ^{[1
]}

Wang, Lei ^{[1
]}

Zeng, Liu ^{[1
]}

Liu, Shengbei ^{[1
]}

Liu, Bin ^{[1
]}

Dong, Lin ^{[1
]}

Liu, Xingfang ^{[1
]}

Yan, Guoguo ^{[1
]}

Tian, Lixin ^{[1
]}

Zeng, Yiping ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2013年 / 117卷 / 46期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; CRYSTAL-STRUCTURE; GROWTH; BISMUTH; POLARIZATION; MOCVD; OXYGEN;

D O I：

10.1021/jp4080652

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Bismuth ferrite (BiFeO3) thin films were grown by atomic layer deposition (ALD) by combining ALD of Bi2O3 and Fe2O3 and monitored by in-situ quartz crystal microbalance (QCM). The physical and chemical mechanisms of ALD of BiFeO3 were studied according to the results of in-situ QCM and indicate that the deposition of Bi-O and Fe-O were self-limited by molecular sizes of precursors and chemical absorption between precursors and hydroxyl groups. Pure Bi3+ and Fe3+ with atomic ratio of 1:1 were formed during the ALD, and no evaporation of Bi atoms was found at 250 degrees C by X-ray photoelectron spectroscopy (XPS). Pure rhombohedral phase was formed in BiFeO3 films after annealing at 650 degrees C by using X-ray diffraction (XRD). Polarization property of the ALD BFO film was observed and studied by using piezoresponse force microscopy (PFM). The ALD growth of BFO films demonstrates that ALD is an advanced deposition technique for BFO film preparation and memory device application.

引用

页码：24579 / 24585

页数：7

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