Time-resolved photoluminescence in porous silicon

被引:4
|
作者
Kudrna, J
Bartosek, P
Trojanek, F
Pelant, I
Maly, P
机构
[1] CHARLES UNIV,FAC MATH & PHYS,CZ-12116 PRAGUE 2,CZECH REPUBLIC
[2] ACAD SCI CZECH REPUBL,INST PHYS,PRAGUE 6,CZECH REPUBLIC
关键词
porous silicon; photoluminescence; stretched exponential;
D O I
10.1016/S0022-2313(96)00283-9
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report a detailed study of red photoluminescence decay in porous silicon at temperatures 10-300 K. We concentrate on the slow component (similar to 10(-4) s) which originates in the recombination of carriers trapped in the surface localized states. Analysis of the experimental data shows that photoluminescence dynamics is dominated by a thermally activated nonradiative process and brings new information on its microscopic origin.
引用
收藏
页码:347 / 349
页数:3
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