TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY OF POROUS SILICON

被引：11
|
作者：
LAIHO, R [1 ]
PAVLOV, A [1 ]
TSUBOI, T [1 ]
机构：
[1] KYOTO SANGYO UNIV,FAC ENGN,KITA KU,KYOTO 603,JAPAN
来源：
JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期
关键词：
D O I：
10.1016/0022-2313(93)90112-Z
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Time-resolved photoluminescence (PL) spectra of porous Si have been investigated between 25 and 295 K. At high temperatures the PL band shows within a period of 110 mu s after excitation a continuous redshift from 630 to 675 nm. In the ns-regime a rich fine structure of the PL band was observed. This could be decomposed into three peaks and their associated phonon replica with the 1100cm(-1) stretching mode of Si-O-Si. These peaks are located in the region of the predicted lowest exciton transitions of porous Si.
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页码：89 / 93
页数：5
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