SBN thin films growth by RF plasma beam assisted pulsed laser deposition

被引：6

作者：

Scarisoreanu, N. D. ^{[1
]}

Dinescu, G. ^{[1
]}

Birjega, R. ^{[1
]}

Dinescu, M. ^{[1
]}

Pantelica, D. ^{[2
]}

Velisa, G. ^{[2
]}

Scintee, N. ^{[2
]}

Galca, A. C. ^{[3
]}

机构：

[1] NILPRP, Bucharest 77125, Romania

[2] HH NIPNE, Bucharest 77125, Romania

[3] NIMP, Bucharest 77125, Romania

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1007/s00339-008-4753-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SBN thin films were grown on MgO and Silicon substrates by PLD and RF-PLD (radiofrequency assisted PLD) starting from single crystal Sr0.6Ba0.4Nb2O6 and ceramic Sr0.5Ba0.5Nb2O6 stoichiometric targets. Morphological and structural analyses were performed on the SBN layers by AFM and XRD and optical properties were measured by spectroellipsometry. The films composition was determined by Rutherford Backscattering Spectrometry. The best set of experimental conditions for obtaining crystalline, c-axis preferential texture and with dominant 31 degrees in-plane orientation relative to the MgO (100) axis is identified.

引用

页码：795 / 800

页数：6

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