Contribution to the modeling of a non-ideal Sigma-Delta modulator

被引：6

作者：

Dendouga, Abdelghani ^{[1
,2
]}

Bouguechal, Nour-eddine ^{[1
]}

Kouda, Souhil ^{[1
]}

Barra, Samir ^{[1
]}

Lakehal, Brahim ^{[1
]}

机构：

[1] Univ Batna, Adv Elect Lab, Batna 05000, Algeria

[2] CDTA, Microelect & Nanotechnol Div, Algiers 16303, Algeria

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2012年 / 11卷 / 04期

关键词：

Oversampling modulators; ADC modeling; Switched capacitor; Charge injection; Clock feed through;

D O I：

10.1007/s10825-012-0409-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One major issue facing the design and the simulation of complex circuits, such as Sigma-Delta modulators (I I"M) pound, is the relatively large computing-time; required when using transistor level based simulators. Hence, high-level system modeling is suitable to achieve a time-efficient IC design. In this scope, the aim of the present work is to develop an enhanced model for a switched-capacitor second order sigma delta modulator. Besides the numerous effects, already included in the standard models, many additional non-idealities aspects have been taken into consideration. Namely, the DC nonlinearity behavior of both: the operational amplifier (OP-AMP) and the switches ON-resistance. The obtained model permits, thus, more accurate prediction of the relative signal-to-noise ratio (SNR), compared to the standard one.

引用

页码：321 / 329

页数：9

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