Effect of photo-assisted RIE damage in GaN Schottky structures

被引：0
|
作者：
Mouffak, Z
Medelci-Djezzar, N
Boney, C
Bensaoula, A
Trombetta, L
机构：
来源：
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISDRS.2001.984540
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：442 / 445
页数：4
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