Evaluation of test structures for the novel n+-in-p pixel and strip sensors for very high radiation environments

被引：10
|
作者：
Unno, Y. [1 ,7 ]
Mitsui, S. [7 ]
Hori, R. [1 ]
Ikegami, Y. [1 ]
Terada, S. [1 ]
Kamada, S. [2 ]
Yamamura, K. [2 ]
Hanagaki, K. [6 ]
Hara, K. [9 ]
Jinnouchi, O. [8 ]
Kimura, N. [10 ]
Nagai, K. [9 ]
Nakano, I. [5 ]
Oda, S. [4 ]
Takashima, R. [3 ]
Takubo, Y. [1 ]
Tojo, J. [4 ]
Yorita, K. [10 ]
机构：
[1] High Energy Accelerator Res Org KEK, Inst Particle & Nucl Study, 1-1 Oho, Tsukuba, Ibaraki 3050801, Japan
[2] Hamamatsu Photon KK, Solid State Div, Higashi Ku, Hamamatsu, Shizuoka 4358553, Japan
[3] Kyoto Univ Educ, Dept Educ, Fushimi Ku, Kyoto 6128522, Japan
[4] Kyushu Univ, Dept Phys, Higashi Ku, Fukuoka 8128581, Japan
[5] Okayama Univ, Dept Phys, Kita Ku, Okayama 7008530, Japan
[6] Osaka Univ, Dept Phys, Toyonaka, Osaka 5600043, Japan
[7] Grad Univ Adv Studies SOKENDAI, Tsukuba, Ibaraki 3050801, Japan
[8] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528550, Japan
[9] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan
[10] Waseda Univ, Res Inst Sci & Engn, Shinjuku Ku, Tokyo 1698050, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2013年 / 731卷
基金：
日本学术振兴会;
关键词：
Silicon sensor; Pixel; Strip; n-in-p; p-type; Radiation damage;
D O I：
10.1016/j.nima.2013.04.075
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Radiation tolerant n(+)-in-p silicon sensors were developed for use in very high radiation environments. Novel n(+)-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n(+) implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states. (C) 2013 Elsevier BM. All rights reserved.
引用
收藏
页码：183 / 188
页数：6
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