Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

被引：31

作者：

Hara, K. ^{[1
]}

Affolder, A. A. ^{[10
]}

Allport, P. P. ^{[10
]}

Bates, R. ^{[7
]}

Betancourt, C. ^{[16
]}

Bohm, J. ^{[15
]}

Brown, H. ^{[10
]}

Buttar, C. ^{[7
]}

Carter, J. R. ^{[4
]}

Casse, G. ^{[10
]}

Chen, H. ^{[2
,3
]}

Chilingarov, A. ^{[9
]}

Cindro, V. ^{[11
,12
]}

Clark, A. ^{[6
]}

Dawson, N. ^{[16
]}

DeWilde, B. ^{[18
]}

Doherty, F. ^{[7
]}

Dolezal, Z. ^{[14
]}

Eklund, L. ^{[7
]}

Fadeyev, V. ^{[16
]}

Ferrere, D. ^{[6
]}

Fox, H. ^{[9
]}

French, R. ^{[17
]}

Garcia, C. ^{[19
]}

Gerling, M. ^{[16
]}

Sevilla, S. Gonzalez ^{[6
]}

Gorelov, I. ^{[13
]}

Greenall, A. ^{[10
]}

Grillo, A. A. ^{[16
]}

Hamasaki, N. ^{[1
]}

Hatano, H. ^{[1
]}

Hoeferkamp, M. ^{[13
]}

Hommels, L. B. A. ^{[4
]}

Ikegami, Y. ^{[8
]}

Jakobs, K. ^{[5
]}

Kierstead, J. ^{[2
,3
]}

Kodys, P. ^{[14
]}

Koehler, M. ^{[5
]}

Kohriki, T. ^{[8
]}

Kramberger, G. ^{[11
,12
]}

Lacasta, C. ^{[19
]}

Li, Z. ^{[2
,3
]}

Lindgren, S. ^{[16
]}

Lynn, D. ^{[2
,3
]}

Maddock, P. ^{[16
]}

Mandic, I. ^{[11
,12
]}

Martinez-McKinney, F. ^{[16
]}

Marti i Garcia, S. ^{[19
]}

Maunu, R. ^{[18
]}

McCarthy, R. ^{[18
]}

机构：

[1] Univ Tsukuba, Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

[2] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA

[3] Instrumentat Div, Upton, NY 11973 USA

[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[5] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany

[6] Univ Geneva, Sect Phys, CH-1211 Geneva, Switzerland

[7] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[8] High Energy Accelerator Org, KEK, INPS, Tsukuba, Ibaraki 3050801, Japan

[9] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[10] Univ Liverpool, Oliver Lodge Lab, Dept Phys, Liverpool L69 7ZE, Merseyside, England

[11] Univ Ljubljana, Jozef Stefan Inst, Ljubljana, Slovenia

[12] Univ Ljubljana, Dept Phys, Ljubljana 61000, Slovenia

[13] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

[14] Charles Univ Prague, Fac Math & Phys, Prague 8, Czech Republic

[15] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic

[16] UC Santa Cruz, SCIPP, Santa Cruz, CA 95064 USA

[17] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[18] SUNY Stony Brook, Dept Phys & Astron, Stony Brook, NY 11794 USA

[19] UVEG, IFIC, Ctr Mixto, CSIC, Valencia 46071, Spain

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 636卷

关键词：

p-Bulk silicon; Microstrip; Charge collection; Radiation damage; MICROSTRIP SENSORS; DETECTORS;

D O I：

10.1016/j.nima.2010.04.090

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We are developing n(+)-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb(-1), which is twice the sLHC integrated luminosity goal. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：S83 / S89

页数：7

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