Theoretical Study of Acceptor-Donor Complexes in 4H-SiC

被引：10
|
作者：
Miyata, Masanori [1 ]
Hayafuji, Yoshinori [1 ]
机构：
[1] Kwansei Gakuin Univ, Grad Sch Sci & Technol, Sanda, Hyogo 6691337, Japan
来源：
APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 11期
关键词：
D O I：
10.1143/APEX.1.111401
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The total energies and electronic structures of acceptor-donor complexes in 4H-SiC were investigated using ab initio calculation methods. Our calculations covered the A(2)D complex consisting of substitutional two-acceptor atoms from group-III elements and a nitrogen (N) donor atom. Results indicate some A(2)D complexes can exist stably, and solid solubilities of Al(2)N and Ga(2)N may be greatly enhanced. We also found that Ga(2)N introduces a shallower acceptor level compared to conventional acceptor atoms such as B and Al. Our results suggest that Ga(+)/N(+) co-implantation is one of the promising candidates for a doping method to realize low-resistivity p-type 4H-SiC. (C) 2008 The Japan Society of Applied Physics
引用
收藏
页码：1114011 / 1114013
页数：3
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