Far-Field Energy Harvesting Rectifier Analysis

被引:0
|
作者
Pflug, Hans W. [1 ]
Keyrouz, Shady [2 ]
Visser, Hubregt J. [1 ,2 ]
机构
[1] IMEC, Holst Ctr, Eindhoven, Netherlands
[2] Eindhoven Univ Technol, Eindhoven, Netherlands
关键词
Diode; diode model; rectifier; Schottky barrier diode; wireless energy transfer;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
An accurate equivalent circuit model to predict the power conversion efficiency (PCE) of a Schottky Barrier Diode (SBD) is presented in this paper. By making use of good insight into the used SBD models and careful analysis of circuit behavior, more efficient rectifier circuits have been identified. An increase in circuit efficiency of 18-25% is shown compared to state of the art, resulting in 20-180% more available energy from the rectifying circuit. Also the accuracy of the simulation results has increased significantly. All the simulations in this paper are performed in a conjugately matched environment, which allows for an objective comparison of different Schottky diodes.
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页数:4
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