Temperature dependence of THz radiation from semi-insulating InP surface

被引：5

作者：

Nakajima, M ^{[1
]}

Takahashi, M ^{[1
]}

Hangyo, M ^{[1
]}

机构：

[1] Osaka Univ, Res Ctr Superconductor Photon, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF LUMINESCENCE | 2001年 / 94卷

关键词：

THz radiation; femtosecond pulse laser; semiconductor surface; temperature dependence;

D O I：

10.1016/S0022-2313(01)00351-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Temperature dependence of the THz radiation from n-, p-, and semi-insulating-(SI-) InP surfaces excited by ultrashort laser pulses has been studied in detail. It is found that the polarity reversal of the waveform occurs at 120 K for SI-InP whereas it does not for n- and p-InP. This result is interpreted in terms of the crossover of the two radiation mechanisms, i.e. the current surge effect due to a built-in surface field and the photo-Dember effect: the former is effective at high temperatures and the latter is effective at low temperatures. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：627 / 630

页数：4

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