Impurity and vacancy effects in graphene

被引：1

作者：

Loktev, V. M. ^{[1
]}

Pogorelov, Yu. G. ^{[2
]}

机构：

[1] Natl Acad Sci Ukraine, Bogolyubov Inst Theoret Phys, 14B Metrolohichna Str, UA-03680 Kiev, Ukraine

[2] Univ Porto, Dept Fis, IFIMUP, P-4169007 Oporto, Portugal

来源：

LOW TEMPERATURE PHYSICS | 2012年 / 38卷 / 08期

关键词：

DEFECTS; STATES; FIELD;

D O I：

10.1063/1.4743562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Green function analysis is developed for the quasiparticle spectrum of 2D graphene sheets with different types of substitutional disorder, including vacancies. Impurity effects in this system are found to be anomalous, are compared to those in well-known doped semiconductors, and are explained in terms of conical singularities in the band spectrum of pure graphene. Criteria for the appearance of localized states on clusters of impurity scatterers and for qualitative restructuring of the band spectrum are established and the possibility of a distinctive metal/insulator transition when vacancies are present is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4743562]

引用

页码：792 / 798

页数：7

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