Evaluation of SiC MOSFETs for a High Efficiency Three-Phase Buck Rectifier

被引：0
|
作者：
Xu, Fan [1 ]
Guo, Ben [1 ]
Tolbert, Leon M. [1 ]
Wang, Fred [1 ]
Blalock, Ben J. [1 ]
机构：
[1] Univ Tennessee, Ctr Ultra Wide Area Resilient Elect Energy Transm, Dept Elect Engn & Comp Sci, Knoxville, TN 37996 USA
来源：
2012 TWENTY-SEVENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2012年
关键词：
MODULATION METHODS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the characteristics of a 1200 V, 33 A SiC MOSFET and a 1200 V, 60 A SiC schottky barrier diode (SBD). The switching characteristics of the devices are tested by a double pulse test (DPT) based on a current-source structure at voltage levels up to 680 V and current up to 20 A. In addition, based on these devices, a 7.5 kW, three-phase buck rectifier for a 400 V-dc architecture data center power supply is designed. The total loss of this rectifier is calculated full load. The results show that the SiC based buck rectifier can obtain low power loss and smaller weight and volume than a Si based rectifier.
引用
收藏
页码：1762 / 1769
页数：8
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