Ultralow Power Nonlinear Response in an Si Photonic Crystal Nanocavity

被引：17
|
作者：
Zhang, Yong [1 ]
Li, Danping [1 ]
Zeng, Cheng [1 ]
Shi, Yu [1 ]
Huang, Zengzhi [1 ]
Yu, Jinzhong [1 ]
Xia, Jinsong [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China
来源：
IEEE PHOTONICS JOURNAL | 2013年 / 5卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Nonlinear optics; integrated optics; photonic crystals; microcavity devices; silicon; OPTICAL BISTABILITY; DEFECT; DIODE;
D O I：
10.1109/JPHOT.2013.2273734
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical nonlinear response and bistability behavior are observed in a fabricated silicon photonic crystal three defect-long (L3) nanocavity. The L3 cavity, which is coupled with a photonic crystal waveguide, has a quality factor of 60 000. Optical nonlinear response of the L3 cavity is observed at 4.65-mu W input power, and the threshold power for optical bistability in the L3 cavity is 26.1 mu W, which are the lowest values for silicon L3 cavities. A nonlinear coupled mode model is established to analyze nanocavity characteristics systematically. Numerical simulation results indicate that the ultralow power nonlinearity is due to the high Q factor and large thermal resistance of the nanocavity.
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收藏
页数：9
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