Ultralow Power Nonlinear Response in an Si Photonic Crystal Nanocavity

被引：17

作者：

Zhang, Yong ^{[1
]}

Li, Danping ^{[1
]}

Zeng, Cheng ^{[1
]}

Shi, Yu ^{[1
]}

Huang, Zengzhi ^{[1
]}

Yu, Jinzhong ^{[1
]}

Xia, Jinsong ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China

来源：

IEEE PHOTONICS JOURNAL | 2013年 / 5卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Nonlinear optics; integrated optics; photonic crystals; microcavity devices; silicon; OPTICAL BISTABILITY; DEFECT; DIODE;

D O I：

10.1109/JPHOT.2013.2273734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical nonlinear response and bistability behavior are observed in a fabricated silicon photonic crystal three defect-long (L3) nanocavity. The L3 cavity, which is coupled with a photonic crystal waveguide, has a quality factor of 60 000. Optical nonlinear response of the L3 cavity is observed at 4.65-mu W input power, and the threshold power for optical bistability in the L3 cavity is 26.1 mu W, which are the lowest values for silicon L3 cavities. A nonlinear coupled mode model is established to analyze nanocavity characteristics systematically. Numerical simulation results indicate that the ultralow power nonlinearity is due to the high Q factor and large thermal resistance of the nanocavity.

引用

页数：9

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