Charge carrier transport with weak coupling in BaBiO3

被引:4
|
作者
Ghosh, A [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
关键词
semiconductors; electronic transport; electron-phonon interactions; valence fluctuations;
D O I
10.1016/S0038-1098(99)00284-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have presented the electrical conductivity for the semiconducting BaBiO3 as a function of temperature. We have observed that the conductivity is nonactivated and that the variable range hopping and the small polaron hopping cannot dominate the charge transport process in BaBiO3 like other semiconductors. On the contrary, we have observed that the logarithmic conductivity is proportional to T-p, where the exponent p is independent of temperature. We have shown that the charge transport process occurs by the multiphonon assisted hopping of the charge carriers that interact weakly with phonons. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:45 / 47
页数:3
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