Coupled Distributed Bragg Reflector for high brightness red light-emitting diodes

被引：0

作者：

Tian, Yu ^{[1
]}

Xu, Li ^{[1
]}

Xue, Zhiwei ^{[1
]}

Wei, Zhipeng ^{[1
]}

Yu, Fei ^{[1
]}

Zou Yonggang ^{[1
]}

Ma, Xiaohui ^{[1
]}

Zhao, Wei ^{[2
]}

Sui, Qingxue ^{[2
]}

Zhang, Zhimin ^{[2
]}

机构：

[1] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

[2] PLA, Changchun Reg Off, Armored Forces Representat Bur, Equipment Headquarters, Changchun 130103, Turkey

来源：

2012 INTERNATIONAL CONFERENCE ON OPTOELECTRONICS AND MICROELECTRONICS (ICOM) | 2012年

关键词：

AlGaInP LED; coupled distributed bragg reflector; MOCVD;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaInP LEDs with Coupled distributed bragg reflectors were grown by Metal-organic Chemical Vapor Deposition (MOCVD). The results showed that the peak wavelength of this structure LED was 625nm, and normal luminous intensity was increased to 164mcd on injection current 20mA from the LED with coupled DBR structure.

引用

页码：102 / 104

页数：3

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