Wavelength tuning of InAs quantum dots grown on (311)B InP

We report on the synthesis of InAs quantum dots on (311)B InP substrates. It is found that the use of such high index surfaces allows the formation of a high density (5X10(10) islands/cm(2)) of small InAs islands (diameter approximate to 350 Angstrom) on InP. Moreover, a large improvement of the size uniformity is obtained in comparison with deposition on (100) surface. The standard height deviations are +/-13% and +/-50% for islands grown on (311)B and (100)surfaces, respectively. Then, we show that the modification of the As/P flux sequences, after the island formation, permits the control of the quantum dot emission wavelength. The achievement of quantum dots emitting at 1.55 mm at 300 K indicates that this method is promising for telecom device making. (C) 1999 American Institute of Physics. [S0003-6951(99)01022-0].