Lateral DC contact RF MEMS switch with fine gap combs

被引：0
|
作者：
Kang, Sungchan [1 ]
Kim, Hyeon Cheol [1 ]
Chun, Kukjin [1 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
来源：
TENCON 2007 - 2007 IEEE REGION 10 CONFERENCE, VOLS 1-3 | 2007年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We developed lateral DC contact RF MEMS switch using combs. Our goal was to fabricate RF MEMS switch with high reliability and good RF characteristics for FEM module in wireless transceiver system. Therefore, we used silicon substrate for combs in order to achieve big contact force, small off-state capacitance, and high reliability. As a result, our switch showed insertion loss less than 0.44 dB at 2GHz isolation greater than 60dB, and low actuation voltage at 26V.
引用
收藏
页码：1260 / 1263
页数：4
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