Ferromagnet semiconductor hybrid structures grown by molecular-beam epitaxy

被引：27
|
作者：
Tanaka, M
机构：
[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 113, Japan
[2] PRESTO, Japan Sci & Technol Corp, Kawaguchi 332, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷
基金：
日本科学技术振兴机构;
关键词：
ferromagnet semiconductor hybrid structures; MnAs; GaAs; trilayer; (GaMn)As; magnetic semiconductor;
D O I：
10.1016/S0022-0248(98)01446-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Recent studies on two types of ferromagnet/semiconductor hybrid structures grown by molecular-beam epitaxy (MBE) are described: (1) ferromagnet [MnAs]/semiconductor [GaAs] layered heterostructures, and (2) III-V (GaAs)-based magnetic semiconductor alloy [(GaMn)As] thin films. Their MBE growth, structures, and magnetic properties are presented. (C) 1999 Elsevier Science B.V. All rights reserved.
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页码：660 / 669
页数：10
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