Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores

被引:169
|
作者
Yang, Lina [1 ,2 ]
Yang, Nuo [3 ]
Li, Baowen [1 ,2 ,3 ,4 ,5 ]
机构
[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[2] Natl Univ Singapore, Ctr Computat Sci & Engn, Singapore 117542, Singapore
[3] Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China
[4] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore
[5] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore
基金
中国国家自然科学基金;
关键词
Phononic crystal; thermal conductivity; phonon localization; thermoelectrics; thermoelectric material; molecular dynamics; SILICON NANOWIRES; TEMPERATURE-DEPENDENCE; POROUS SILICON; THERMOELECTRICS; PERFORMANCE; REDUCTION; DYNAMICS; SOUND;
D O I
10.1021/nl403750s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this work, we propose a nanoscale three-dimensional (3D) Si phononic crystal (PnC) with spherical pores, which can reduce the thermal conductivity of bulk Si by a factor up to 10,000 times at room temperature. Thermal conductivity of Si PnCs depends on the porosity, for example, the thermal conductivity of Si PnCs with porosity 50% is 300 times smaller than that of bulk Si. The phonon participation ratio spectra demonstrate that more phonons are localized as the porosity increases. The thermal conductivity is insensitive to the temperature changes from room temperature to 1100 K. The extreme-low thermal conductivity could lead to a larger value of ZT than unity as the periodic structure affects very little the electric conductivity.
引用
收藏
页码:1734 / 1738
页数:5
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