Dielectric properties of highly c-axis oriented chemical solution deposition derived SrBi4Ti4O15 thin films

C-axis oriented thin films of SrBi4Ti4O15 were prepared by a chemical solution deposition method. The influence of precursor chemistry and processing conditions on the resulting film morphology and the dielectric properties of SrBi4Ti4O15 thin films were investigated. By controlling the film formation process, highly c-axis oriented SrBi4Ti4O15 thin films on (111)Pt/Si substrates were obtained at temperatures of 600 degrees C and 700 degrees C. The dielectric constant of the films is about 200 and it is independent of film thickness ranging from 55 to 160 nm. The dielectric constant also shows stable value with an increase in temperature from 25 degrees C to 200 degrees C. The leakage current of the film at 125 degrees C is in the order of 10(-7) A/cm(2) at an applied electric field of 500 kV/cm. These films exhibit stable dielectric constant and excellent insulating properties. (C) 2009 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim