Towards fully integrated high temperature wireless sensors using GaN-based HEMT devices

被引：4

作者：

Huque, Mohammed Aminul ^{[1
]}

Islam, Syed Kamrul ^{[1
]}

Kuruganti, Phani Teja ^{[2
]}

机构：

[1] Univ Tennessee, Dept Elect Engn & Comp Sci, Knoxville, TN 37996 USA

[2] Oak Ridge Natl Lab, Extreme Measurment Commun Ctr, EMC2, Oak Ridge, TN 37831 USA

来源：

2008 51ST MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2 | 2008年

关键词：

D O I：

10.1109/MWSCAS.2008.4616866

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Wireless sensors that are capable of working in extreme environments can significantly improve the efficiency and performance of industrial processes by facilitating better monitoring and control. Gallium Nitride (GaN), a widely researched wide bandgap material, can potentially be used to fabricate components for sensing and actuation for high temperature integrated wireless sensors. In this paper we are presenting an experimental study on the performance of AlGaN/GaN HEMT at high temperatures (up to 300 degrees C). From test results, DC and microwave parameters at different temperatures were extracted.

引用

页码：582 / +

页数：2

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