The presence of chalcogen vacancies in monolayer transition metal dichalcogenides (TMDs) leads to excitons with mixed localized-delocalized character and to reduced valley selectivity. Recent experimental advances in defect design in TMDs allow for a close examination of such mixed exciton states as a function of their degree of circular polarization under external magnetic fields, revealing strongly varying defect-induced magnetic properties. A theoretical understanding of these observations and their physical origins demands a predictive, structure-sensitive theory. In this work, we study the effect of chalcogen vacancies on the exciton magnetic properties in monolayer MoS2. Using many-body perturbation theory, we show how the complex excitonic picture associated with the presence of defects-with reduced valley and spin selectivity due to hybridized electron-hole transitions-leads to a structurally controllable exciton magnetic response. We find a variety of g-factors with changing magnitudes and sign depending on the exciton energy and character. Our findings suggest a pathway to tune the nature of the excitons-and by that their magneto-optical properties-through defect architecture.
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Minist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Qu, Jiafan
Wei, Yadong
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Harbin Inst Technol, Technol Innovat Ctr Mat & Devices Extreme Environm, Sch Mat Sci & Engn, Harbin 150001, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Wei, Yadong
Zhao, Liang
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Minist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Zhao, Liang
Tan, Ruoxi
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Minist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Tan, Ruoxi
Li, Weiqi
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Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Li, Weiqi
Shi, Hongyan
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Minist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Shi, Hongyan
Zhang, Yueling
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Chinese Acad Agr Sci, Harbin Vet Res Inst, State Key Lab Anim Dis Control & Prevent, Harbin 150069, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Zhang, Yueling
Yang, Jianqun
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Harbin Inst Technol, Technol Innovat Ctr Mat & Devices Extreme Environm, Sch Mat Sci & Engn, Harbin 150001, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Yang, Jianqun
Gao, Bo
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Minist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
Gao, Bo
Li, Xingji
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Harbin Inst Technol, Technol Innovat Ctr Mat & Devices Extreme Environm, Sch Mat Sci & Engn, Harbin 150001, Peoples R ChinaMinist Ind & Informat Technol, Inst Modern Opt, Harbin Inst Technol, Sch Phys,Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Peoples R China
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Univ Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USAUniv Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA
Moon, Seunghyun
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Kim, Ansoon
Lee, Nam-Suk
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Pohang Univ Sci & Technol POSTECH, Natl Inst Nanomat Technol NINT, Pohang 37673, South KoreaUniv Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA
Lee, Nam-Suk
Kim, DongHwan
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Korea Res Inst Stand & Sci KRISS, Interdisciplinary Mat Measurement Inst, Daejeon 34113, South KoreaUniv Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA
Kim, DongHwan
Rho, Yecheol
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Korea Res Inst Chem Technol KRICT, Chem Anal Ctr, Daejeon 34114, South KoreaUniv Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA
Rho, Yecheol
Nam, Sang Hwan
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Korea Res Inst Chem Technol KRICT, Lab Adv Mol Probing LAMP, Daejeon 34114, South KoreaUniv Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA
Nam, Sang Hwan
Kim, Daeho
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Bruker Korea, Bruker Nano Surface & Metrol, Seongnam 13493, South KoreaUniv Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA
Kim, Daeho
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Kim, Taewan
Shin, ChaeHo
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Korea Res Inst Stand & Sci KRISS, Interdisciplinary Mat Measurement Inst, Daejeon 34113, South Korea
Univ Sci & Technol, Nanoconvergence Measurement, Daejeon 34113, South KoreaUniv Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA
Shin, ChaeHo
Kim, Hyunwoo
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Korea Res Inst Chem Technol KRICT, Drug Discovery Res Ctr, Daejeon 34114, South KoreaUniv Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA
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Huaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R ChinaHuaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R China
Wang, Yanzong
Huang, Rui
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Huaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R ChinaHuaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R China
Huang, Rui
Kong, Fanjie
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Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R ChinaHuaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R China
Kong, Fanjie
Gao, Benling
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Huaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R ChinaHuaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R China
Gao, Benling
Li, Guannan
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Huaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R ChinaHuaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R China
Li, Guannan
Liang, Feng
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Huaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R ChinaHuaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R China
Liang, Feng
Hu, Guang
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Huaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R ChinaHuaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Jiangsu, Peoples R China