Studying on Thickness Control of ITO films Deposited using RF magnetron Sputtering

被引：1
|
作者：
Ma, Weihong [1 ]
Cai, Changlong [1 ]
机构：
[1] Xian Technol Univ, Sch Photoelect Engn, Xian 710032, Peoples R China
来源：
ADVANCED MATERIALS, PTS 1-3 | 2012年 / 415-417卷
关键词：
RF magnetron sputtering; ITO films; technique parameters; deposition rate;
D O I：
10.4028/www.scientific.net/AMR.415-417.1921
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium tin oxide (ITO) films are widely applied as the transparent electrode in the photoelectric device because of its high conductivity and high transmittance in the visible wavelength. But the resistivity and position of transmittance peak of ITO films were influenced by the thickness of ITO films, so it is important significant to study the deposition rate of ITO films deposited using RF magnetron sputtering. In this paper, ITO films were prepared by RF magnetron sputtering method on K9 glass substrate, the influence of RF power, sputtering pressure, oxygen ratio, and substrate temperature on the deposition rate of ITO films was mainly studied, meanwhile, the influence of annealing temperature on the film thickness and the process stability depositing ITO using RF magnetron sputtering was studied, and the influence mechanism of technique parameters was analyzed.
引用
收藏
页码：1921 / 1924
页数：4
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