Enhanced characterization of ITO films deposited on PET by RF superimposed DC magnetron sputtering

被引：17
|
作者：
Kim, S. I. [1 ]
Jung, T. D. [2 ]
Song, P. K. [1 ]
机构：
[1] Pusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea
[2] Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut Mat, Pusan 609735, South Korea
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 11期
关键词：
RF superimposed DC; Indium tin oxide; Flexible substrate; Bending test; DOPED-INDIUM-OXIDE; THIN-FILMS; COSPUTTERING SYSTEM; ROOM-TEMPERATURE; ZINC-OXIDE; TIN; TRANSPARENT; SUBSTRATE;
D O I：
10.1016/j.tsf.2009.08.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tin-doped indium oxide (ITO) films were deposited on polyethylene terephthalate substrates by RF superimposed DC magnetron sputtering using an ITO target composed of In2O3 (90 wt.%):SnO2 (10 wt.%). The total sputtering power was maintained at 70 W and the power ratio of RF/(RF + DC) was varied from 0 to 100% in steps of 25%. The discharge voltage and deposition rate decreased with increasing RF/(RF + DC) power ratio. The ITO film deposited at a 50% RF portion of the total power showed the lowest resistivity (3.18 x 10(-4)Omega cm), high transmittance (87.5%) and relatively good mechanical durability, which was evaluated using bending and scratch tests. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：3085 / 3088
页数：4
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