Bias Stress Effect in "Air-Gap" Organic Field-Effect Transistors

被引：73
|
作者：
Chen, Y. [1 ]
Podzorov, V. [1 ,2 ]
机构：
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[2] Rutgers State Univ, IAMDN, Piscataway, NJ 08854 USA
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 20期
基金：
美国国家科学基金会;
关键词：
organic single crystal; field-effect transistor; bias stress effect; THIN-FILM TRANSISTORS; TRANSPORT; CRYSTALS; RUBRENE;
D O I：
10.1002/adma.201200455
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：2679 / 2684
页数：6
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